A memristive forming strategy for lowering the contact resistances of two-dimensional semiconductors

Sep 05, 2022 (Nanowerk Spotlight) The silicon-based CMOS technology is fast approaching its physical limits, and the electronics industry is urgently calling for new techniques to keep the long-term development. Two-dimensional (2D) semiconductors, like transition-metal dichalcogenides (TMDs), have become a competitive alternative to traditional semiconducting materials in the post-Moore era,...

Multilayer stack opens door to low-power electronics

Sep 03, 2022 (Nanowerk News) Researchers found that a stack of ultrathin materials, characterized in part at the Advanced Light Source (ALS), exhibits a phenomenon called negative capacitance, which reduces the voltage required for transistor operation (Nature, "Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors"). The material is fully...

Van der Waals infrared photodetectors based on ‘optical’ and ‘electrical’ combined manipulations

Sep 02, 2022 (Nanowerk Spotlight) Blackbody response is highly desired in two-dimensional (2D) infrared photodetectors, which determines their practical applications. State-of-the-art available blackbody response mid-wavelength infrared (MWIR) photodetectors are fabricated using materials such as HgCdTe, InSb and InAsSb. However, these photodetectors need to operate at cryogenic temperatures to minimize thermally...

entanglement of many atoms discovered for the first time

Sep 02, 2022 (Nanowerk News) Be it magnets or superconductors: materials are known for their various properties. However, these properties may change spontaneously under extreme conditions. Researchers at the Technische Universität Dresden (TUD) and the Technische Universität München (TUM) have discovered an entirely new type of such phase transitions. They...